DS1254
3 of 17
RAM READ MODE
The DS1254 executes a read cycle whenever
WE is inactive (high) and CE is active (low). The unique address
specified by the 21 address inputs (A0–A20) defines which of the 2MB of data is to be accessed. Valid data will be
available to the eight data-output drivers within t
ACC (access time) after the last address input is stable, providing
that
CE and OE access times and states are also satisfied. If OE and CE access times are not satisfied, then data
access must be measured from the later occurring signal (
CE or OE) and the limiting parameter is either t
CO for CE
or tOE for OE rather than address access.
RAM WRITE MODE
The DS1254 is in the write mode whenever
WE and CE are in their active (low) state after address inputs are
stable. The later occurring falling edge of
CE or WE will determine the start of the write cycle. The write cycle is
terminated by the earlier rising edge of
CE or WE. All address inputs must be kept valid throughout the write cycle.
WE must return to the high state for a minimum recovery time (t
WR) before another cycle can be initiated. The OE
control signal should be kept inactive (high) during write cycles to avoid bus contention. However, if the output bus
has been enabled (
CE and OE active), then WE will disable the outputs in t
ODW from its falling edge.
DATA RETENTION MODE
The device is fully accessible and data can be written and read only when VCC is greater than VPF. However, when
V
CC falls below the power-fail point, VPF (point at which write protection occurs), the internal clock registers and
SRAM are blocked from any access. When V
CC falls below VBAT, device power is switched from the VCC to VBAT.
RTC operation and SRAM data are maintained from the battery until V
CC is returned to nominal levels. All signals
must be powered down when VCC is powered down.
PHANTOM CLOCK OPERATION
Communication with the phantom clock is established by pattern recognition on a serial bit stream of 64 bits that
must be matched by executing 64 consecutive write cycles containing the proper data on DQ0. All accesses that
occur prior to recognition of the 64-bit pattern are directed to memory.
After recognition is established, the next 64 read or write cycles either extract or update data in the phantom clock,
and memory access is inhibited.
Data transfer to and from the timekeeping function is accomplished with a serial bit stream under control of chip
enable (
CE), output enable (OE), and write enable (WE). Initially, a read cycle to any memory location using the CE
and
OE control of the phantom clock starts the pattern-recognition sequence by moving a pointer to the first bit of
the 64-bit comparison register. Next, 64 consecutive write cycles are executed using the
CE and WE signals of the
device. These 64 write cycles are used only to gain access to the phantom clock. Therefore, any address within the
first 512kB of memory, (00h to 7FFFFh) is acceptable. However, the write cycles generated to gain access to the
phantom clock are also writing data to a location in the memory. The preferred way to manage this requirement is
to set aside just one address location in memory as a phantom clock scratch pad. When the first write cycle is
executed, it is compared to bit 0 of the 64-bit comparison register. If a match is found, the pointer increments to the
next location of the comparison register and awaits the next write cycle. If a match is not found, the pointer does
not advance and all subsequent write cycles are ignored. If a read cycle occurs at any time during pattern
recognition, the present sequence is aborted and the comparison register pointer is reset. Pattern recognition
continues for a total of 64 write cycles as described above until all the bits in the comparison register have been
matched (this bit pattern is shown in Figure 2). With a correct match for 64-bits, the phantom clock is enabled and
相关PDF资料
DS1286I+ IC TIMEKEEPER WATCHDOG 28-EDIP
DS12885T IC RTC W/RAM 128 BYTE 32-TQFP
DS12C887A+ IC RTC W/RAM 128 BYTE 24-EDIP
DS12CR887-5+ IC RTC W/RAM 128 BYTE 24-EDIP
DS1302SN-16 IC TIMEKEEPER T-CHRG IND 16-SOIC
DS1305E/T&R IC RTC SERIAL ALARM 20-TSSOP
DS1306EN/T&R IC RTC SERIAL ALARM IND 20-TSSOP
DS1307N IC RTC SERIAL 512K IND 8-DIP
相关代理商/技术参数
DS1254WB2-150 功能描述:实时时钟 2M X 8 NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube
DS1254WB-C01 功能描述:实时时钟 2M X 8 NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube
DS1254WB-C02 功能描述:实时时钟 2M X 8 NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube
DS1254YB-100 功能描述:IC NVSRAM 16MBIT 100NS 168BGA RoHS:否 类别:集成电路 (IC) >> 时钟/计时 - 实时时钟 系列:- 产品培训模块:Obsolescence Mitigation Program 标准包装:1 系列:- 类型:时钟/日历 特点:警报器,闰年,SRAM 存储容量:- 时间格式:HH:MM:SS(12/24 小时) 数据格式:YY-MM-DD-dd 接口:SPI 电源电压:2 V ~ 5.5 V 电压 - 电源,电池:- 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-WDFN 裸露焊盘 供应商设备封装:8-TDFN EP 包装:管件
DS1254YB2-100 功能描述:实时时钟 2M X 8 NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube
DS125-6-2G 制造商:Electronic Hardware Corporation (EHC) 功能描述:CRANK HANDLE ROUND KNOB 6.35MM 制造商:EHC (ELECTRONIC HARDWARE) 功能描述:CRANK HANDLE ROUND KNOB, 6.35MM 制造商:EHC (ELECTRONIC HARDWARE) 功能描述:CRANK HANDLE ROUND KNOB, 6.35MM; Knob / Dial Style:Round with Crank Handle; Shaft Diameter:6.35mm; Knob Diameter:31.75mm; Shaft Type:Round; Knob Material:Plastic; Shaft Size:1/4 (6.35) in. (mm) ;RoHS Compliant: Yes
DS1258AB-100 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube
DS1258AB-100# 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube